Silicon carbide is dark green or light green, crystal structure of hexagonal system, 9.2 mohs hardness, density 3.18 g/cm, after natural bulk density of 1.00 1.20 g / ㎝ after, particle shape for product such as shape and more sharp blade, good self-sharpening. Its own hardness, grinding and polishing with continuous wear resistance, polishing time is short, grinding effect is good. It is suitable for grinding, cutting and polishing of quartz crystal, rufe boron, semiconductor and photovoltaic single polycrystalline silicon wafer.
Type:
240#/280#/320#/360#/400#/500#/600#/700#/800#/1000#/1200#/1500#/2000#/2500#/3000#/4000#/6000#/8000#
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Standard reference table for silicon carbide products
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日本JIS.R6001.1998（电阻法）
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ISO86/FEPA84
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国标 GB2476-83-83
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粒度号
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D0
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D3
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D50
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D94
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粒度号
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D3 max.
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D50
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D94 min.
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粒度
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基本粒范围
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#240
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127
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103
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57±3
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40
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/
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/
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/
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/
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W63
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63-50
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#280
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112
|
87
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48±3
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33
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F230
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82
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50-56
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34
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W50
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50-40
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#320
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98
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74
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40±2.5
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27
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F240
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70
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42.5-46.5
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28
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|
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#360
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86
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66
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35±2
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23
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F280
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59
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35-38
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22
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W40
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40-28
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#400
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75
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58
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30±2
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20
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F320
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49
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27.7-30.7
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16.5
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#500
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63
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50
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25±2
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16
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W28
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20-28
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#600
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53
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43
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20±1.5
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13
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F360
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40
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21.3-24.3
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12
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#700
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45
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37
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17±1.3
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11
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F400
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32
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16.3-18.3
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8
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W20
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20-14
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#800
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38
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31
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14±1
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9
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#1000
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32
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27
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11.5±1
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7
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F500
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25
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11.8-13.8
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5
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W14
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14-10
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#1200
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27
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23
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9.5±0.8
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5.5
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F600
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19
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8.3-10.3
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3
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#1500
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23
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20
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8±0.6
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4.5
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W10
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10-7
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#2000
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19
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17
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6.7±0.6
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4
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F800
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14
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5.5-7.5
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2
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#2500
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16
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14
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5.5±0.5
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3
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W7
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7-5
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#3000
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13
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11
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4±0.5
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2
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F1000
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10
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3.7-5.3
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1
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#4000
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11
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8
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3±0.4
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1.3
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F1200
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7
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2.5-3.5
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1(80%处)
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W5
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5-3.5
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#6000
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8
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5
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2±0.4
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0.8
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W3.5
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3.5-2.5
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#8000
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6
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3.5
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1.2±0.3
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0.6
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W2.5
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2.5-1.5
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W1.5
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1.5-1.0
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W0.5
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1.0-0.5
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